Resistive RAM or ReRAM has been on the roadmap of various chip manufacturers. It has found its place in the sun owing to high demand in cybersecurity applications. Market Research Future’s (MRFR) report on the virtual reality market outlines the various drivers, obstacles, trends, and opportunities for manufacturers for the forecast period (2020-2027). The COVID-19 outbreak and its effect on the industry have been explored in the report.
Competition Analysis
Rambus Incorporated, Fujitsu Limited, 4DS Memory Limited, Weebit Nano, TSMC, Semiconductor Manufacturing International Corporation, SK Hynix Inc., Intel Corporation, SanDisk, Sony Corporation, Panasonic Corporation, Crossbar Inc., Adesto Technologies Corporation, Reliance Memory, and Micron Technology, Inc. are key players of the ReRAM market. Investments in R&D and awareness of improving technology are part of new strategies by these companies to expand their customer base and launch new products. Collaborations are likely to be seen in the coming years.
Market Scope
The global ReRAM market size was valued at USD 310 million in 2018. It can exhibit 16% CAGR from 2019 to 2025. Use of resistive RAM in enhancing the security of systems can drive the market growth. Recently, Crossbar Inc. has created physical unclonable function (PUF) cryptographic keys owing to being less vulnerable to side channel attacks and consuming low power.
Introduction of artificial intelligence and high-performance computing among large enterprises can provide new opportunities for the market. Semiconductor companies are producing ReRAM due to its low power consumption and need for high bandwidth. The increasing demand for low latency and high read speeds can drive the market demand significantly. Replacement of static and dynamic RAM due to 3D packages and large storage capacity will benefit the market.
But issues of reliability, writing endurance, and resistance drift can hamper market growth.
Segmentation
On the basis of type, the market has been segmented into oxide-based ReRAM and conductive bridging RAM. Conductive bridging RAM is expected to lead in the market due to its use in health trackers and IoT devices. On the other hand, oxide-based ReRAM can capture a large market share owing to its implementation in crossbar architectures. Integration of discrete chips due to its endurance and low power consumption can drive its demand share over the forecast period.
Based on end-user, the market has been segmented into consumer electronics, IT & telecom, aerospace & defense, healthcare, and others. The consumer electronics vertical is estimated to perform exceptionally owing to demand for high-resolution displays with high capacity storage. The high computing power of ReRAM and high switching speed can spur its demand in consumer electronic devices. Increasing demand for connected devices owing to AI, IoT, and wearables coupled with demand for strong capacity servers will augment the segment growth.
Regional Analysis
North America, Central & South America, Europe, Asia-Pacific (APAC), and the Middle East & Africa (MEA) are major regions covered in the ReRAM market.
APAC is anticipated to account for a large market share owing to presence of various foundries and semiconductor manufacturing companies. Demand for non-volatile memory devices in high resolution TVs and smartphones can augur favorably for the market. Establishment of data centers in Japan, China, and India can spur the demand for ReRAM. Recently, GPX India Pvt. Ltd. has launched the GPX Open Cloud Exchange for enabling secure connections to multiple cloud service providers.
North America is set to capture a significant market share due to investments in research and development activities and need for faster computation speeds. Use of cloud computing and data centers can drive the demand for ReRAM in the region. Emergence of embedded non-volatile memory (NVM) in automotive and defense sectors can augur favorably for the regional market.
Industry news
Xenergic, a spinout company from the University of Lund has raised USD 4.6 million for developing low power SRAM, ReRAM, and MRAM technologies.
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